Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K
Identifieur interne : 00C455 ( Main/Repository ); précédent : 00C454; suivant : 00C456Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K
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Abstract
Normal incidence long wave infrared (λc∼9 μm) InAs/In0.15Ga0.85As dots-in-a-well detectors with background limited performance at 91 K, under f#1.7 300 K background irradiance, are reported. Two distinct peaks (λp1∼4.2 μm and λp2∼7.6 μm) are observed in the spectral response, which could possibly be due to a bound-to-continuum transition and a bound-to-bound transition, respectively. The operating wavelength of the detector can be varied by changing the width of the quantum well surrounding the quantum dots. Using calibrated blackbody measurements, the peak responsivity of the detector is measured to be 0.73 A/W (Vb=-1.7 V at T=60 K). © 2003 American Institute of Physics.
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Krishna</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi, Maryland 20783</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>Army Research Laboratory, Sensors and Electron Devices Directorate, Adelphi</wicri:cityArea></affiliation></author><author><name sortKey="Raghavan, S" uniqKey="Raghavan S">S. Raghavan</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Von Winckel, G" uniqKey="Von Winckel G">G. Von Winckel</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Rotella, P" uniqKey="Rotella P">P. Rotella</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Stintz, A" uniqKey="Stintz A">A. Stintz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author><author><name sortKey="Morath, C P" uniqKey="Morath C">C. P. Morath</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base, New Mexico 87117</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base</wicri:cityArea></affiliation></author><author><name sortKey="Le, D" uniqKey="Le D">D. Le</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base, New Mexico 87117</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Air Force Research Lab (AFRL/VSSS), 3550 Aberdeen Avenue S. E., Building 426, Kirtland Air Force Base</wicri:cityArea></affiliation></author><author><name sortKey="Kennerly, S W" uniqKey="Kennerly S">S. W. Kennerly</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque, New Mexico 87106</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nouveau-Mexique</region></placeName><wicri:cityArea>Center for High Technology Materials, EECE Department, University of New Mexico, Albuquerque</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0204302</idno><date when="2003-04-21">2003-04-21</date><idno type="stanalyst">PASCAL 03-0204302 AIP</idno><idno type="RBID">Pascal:03-0204302</idno><idno type="wicri:Area/Main/Corpus">00D770</idno><idno type="wicri:Area/Main/Repository">00C455</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Infrared detectors</term><term>Photodetectors</term><term>Semiconductor quantum dots</term><term>Semiconductor quantum wells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560G</term><term>7363K</term><term>7867H</term><term>7830F</term><term>7321L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Puits quantique semiconducteur</term><term>Photodétecteur</term><term>Détecteur IR</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Normal incidence long wave infrared (λ<sub>c</sub>∼9 μm) InAs/In<sub>0.15</sub>Ga<sub>0.85</sub>As dots-in-a-well detectors with background limited performance at 91 K, under f#1.7 300 K background irradiance, are reported. Two distinct peaks (λ<sub>p1</sub>∼4.2 μm and λ<sub>p2</sub>∼7.6 μm) are observed in the spectral response, which could possibly be due to a bound-to-continuum transition and a bound-to-bound transition, respectively. The operating wavelength of the detector can be varied by changing the width of the quantum well surrounding the quantum dots. Using calibrated blackbody measurements, the peak responsivity of the detector is measured to be 0.73 A/W (V<sub>b</sub>=-1.7 V at T=60 K). © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>16</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Two color InAs/InGaAs dots-in-a-well detector with background-limited performance at 91 K</s1></fA08><fA11 i1="01" i2="1"><s1>KRISHNA (S.)</s1></fA11><fA11 i1="02" i2="1"><s1>RAGHAVAN (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>VON WINCKEL (G.)</s1></fA11><fA11 i1="04" i2="1"><s1>ROTELLA (P.)</s1></fA11><fA11 i1="05" i2="1"><s1>STINTZ (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>MORATH (C. P.)</s1></fA11><fA11 i1="07" i2="1"><s1>LE (D.)</s1></fA11><fA11 i1="08" i2="1"><s1>KENNERLY (S. 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